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Title: Synopsys S-Litho 2024.06 SLitho [Print This Page]

Author: asksoft1 Time: 2025-7-22 13:44
Title: Synopsys S-Litho 2024.06 SLitho
Synopsys S-Litho 2024.06 SLitho

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Synopsys SLitho is a lithography simulation and modeling tool developed by Synopsys , used in the semiconductor industry for advanced photolithography process modeling, optical proximity correction (OPC), source-mask optimization (SMO), and other resolution enhancement techniques (RET).

It plays a critical role in the design-to-silicon flow, especially at advanced process nodes (e.g., 5nm, 4nm, 3nm, and below) where patterning challenges become more complex due to diffraction and other optical effects.

Overview of Synopsys SLitho

Full Name : Synopsys Lithography Platform (often abbreviated as SLitho )
Developer : Synopsys, Inc.
Product Line : Part of Synopsys’ Silicon Engineering Group
Use Case : Lithography simulation, OPC, RET development, SMO, lithography hotspot detection
Integration : Works with other tools like Sentaurus TCAD , IC Validator , and foundry PDKs

Key Features of SLitho

High-Accuracy Lithography Simulation :
- Models full optical system including light source, mask, projection lens, and resist stack.
- Supports both scalar and vector-based electromagnetic simulations.
Optical Proximity Correction (OPC) :
- Enables model-based OPC to correct for pattern distortions during photolithography.
- Fast convergence algorithms for large-scale IC layouts.
Source-Mask Optimization (SMO) :
- Simultaneous optimization of illumination source and mask patterns to improve imaging fidelity.
Process Window Analysis :
- Evaluates how layout features behave across focus and exposure variations.
Machine Learning Acceleration :
- Uses ML-based models to speed up simulation and OPC runtimes without sacrificing accuracy.
Integration with Foundry Flows :
- Used by major foundries (TSMC, Samsung, Intel) for developing and validating lithography models.
Support for EUV and ArF Immersion Lithography :
- Handles both current and next-generation lithography technologies.

️ Common Use Cases

Use Case

Description

Model-Based OPC
Corrects layout features to compensate for optical and process distortions

Hotspot Detection
Identifies problematic layout patterns before tape-out

RET Development
Develops and validates resolution enhancement techniques

SMO
Optimizes mask and illumination source together for better imaging

DFM & PV Band Analysis
Analyzes layout robustness across process variations
“S-Litho 2024”:

“S-Litho” could be a shorthand or internal code name for a lithography-related tool.
The “2024” suffix likely refers to the 2024 release version, which is common in EDA (Electronic Design Automation) software releases (e.g., 2024.03 or 2024.06).

Related Tools from Synopsys:

Sentaurus Lithography :
- A full-field lithography simulator used for modeling optical projection systems.
- Used for OPC, RET development, and process window analysis.
IC Validator :
- Includes lithography-aware physical verification capabilities.
- Used for fast lithography hotspot detection without full simulation.
Proteus :
- An older generation lithography simulation tool, largely succeeded by Sentaurus Lithography.
Solido Variation Designer :
- Used for variation-aware design, which may integrate with lithography models.

Sentaurus Lithography (S-Litho) 2024Early litho pathfinding, process optimization and analysis

S-Litho represents advanced lithography simulation for semiconductor device manufacturing process development and optimization. It covers a wide range of applications in proximity printing, optical, immersion, extreme ultraviolet (EUV), and electron beam (e-beam) lithography. Process-limiting effects within the imaging system of an exposure tool can be thoroughly analyzed, taking the impact of mask and substrate topography on photoresist patterning into account. Interfacing S-Litho with Synopsys TCAD tools allows a seamless modeling of complex integration techniques such as double-patterning. The link between S-Litho and Synopsys Proteus mask synthesis applications accelerates the generation and validation of optical proximity correction (OPC) models and improves process robustness.

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